Staff Profile

Biography

Dr. Dani S. Assi recived a Bachelor of Science (BSc) in Biomedical Engineering from Lodz University of Technology (TUL) in 2018, followed by a Master of Science (MSc) in Biomedical Engineering from the University of Glasgow (UofG) in 2019. He then completed his Ph.D. in Electrical and Electronics Engineering at the University of Glasgow (UofG) in 2023. Dr. Dani S. Assi, currently a lecturer at the School of Science and Technology at Hong Kong Metropolitan University (HKMU), specializes in Neuromorphic Computing and Quantum Technologies.

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Teaching Areas & Research Interests

• Neuromorphic Computing
• Quantum Technologies
• Artificial synaptic devices
• Medical Devices
• Topological Insulators

Selected Publications

Journal Articles

• D. S. Assi, H. Huang, V. Karthikeyan, V. C. S. Theja, M. M. de Souza, V. A. L. Roy, Topological Quantum Switching Enabled Neuroelectronic Synaptic Modulators for Brain Computer Interface. Adv. Mater. 2024, 2306254. https://doi.org/10.1002/adma.202306254
• D. S. Assi, H. Huang, V. Karthikeyan, V. C. S. Theja, M. M. de Souza, N. Xi, W. J. Li, V. A. L. Roy, Quantum Topological Neuristors for Advanced Neuromorphic Intelligent Systems. Adv. Sci. 2023, 10, 2300791. https://doi.org/10.1002/advs.202300791
• D. S. Assi, M. P. Haris, V. Karthikeyan, S. Kazim, S. Ahmad, V. A. L. Roy, Low Switching Power Neuromorphic Perovskite Devices with Quick Relearning Functionality. Adv. Electron. Mater. 2023, 9, 2300285. https://doi.org/10.1002/aelm.202300285
• D. S. Assi, Huang, H., Kandira, K.U., Alsulaiman, N.S., Theja, V.C.S., Abbas, H., Karthikeyan, V. and Roy, V.A.L. (2023), Charge-Mediated Copper-Iodide-Based Artificial Synaptic Device with Ultrahigh Neuromorphic Efficacy. Phys. Status Solidi RRL, 17: 2300191. https://doi.org/10.1002/pssr.202300191
• V. C. S. Theja, D. S. Assi, H. Huang, R. S. Alsulami, B. J. Chen, C. H. Chan, C.-H. Shek, V. Karthikeyan, V. A. L. Roy, 3D Architectural MXene-based Composite Films for Stealth Terahertz Electromagnetic Interference Shielding Performance. Adv. Mater. Interfaces 2023, 10, 2300440. https://doi.org/10.1002/admi.202300440
• V. C. S. Theja, V. Karthikeyan, D. S. Assi, H. Huang, V. Kannan, Y. Chen, C.-H. Shek, V. A. L. Roy, 2D MXene Interface Engineered Bismuth Telluride Thermoelectric Module with Improved Efficiency for Waste Heat Recovery. Adv. Mater. Technol. 2024, 2301722. https://doi.org/10.1002/admt.202301722

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Modified Date: 12 May, 2024
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